GaN Power Amplifiers: Results and Prospective

نویسندگان

  • Rocco Giofrè
  • Luca Piazzon
  • Paolo Colantonio
  • Elisa Cipriani
  • Franco Giannini
چکیده

This article is focused on GaN-based power amplifiers for applications up to 10 GHz. Several PAs developed in both MMIC and hybrid technologies for different RF and microwave frequency bands will be described. In particular, the designs of two ultra-wideband (UWB) PAs are reported together with experimental results. The first one is based on commercial GaN-on-SiC technology while the other one is developed exploiting a GaN-on-Si technology. Examples of GaN-based Doherty PAs for cellular base-stations are also discussed and state-of-the-art performances are reported. Finally, a GaN MMIC PA for Synthetic Aperture Radar (SAR) systems at X-Band is described with related experimental investigation. Index Terms – Power Amplifiers, GaN, MMIC, Ultra-Wide Band, HMIC, Doherty.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

متن کامل

GaN Device for Highly Efficient Power Amplifiers

Fujitsu has been developing gallium nitride high electron mobility transistors (GaNHEMT) for small transmitter amplifiers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in highly efficient transmitter amplifiers has attracted much attention because of its high breakdown voltage characteristics. High-efficiency amplifiers with high gain are needed to decrease the power consumpt...

متن کامل

GaN HEMT Amplifier for C-band Space Applications

1. Introduction With the diversifying functions and increasing traffic of recent satellite communications, the amplifiers installed in satellites must provide higher power and improved efficiency. Commonly-used satellite-mounted amplifiers are, in general, either traveling wave tube amplifiers (TWTAs) or solid state power amplifiers (SSPAs) using gallium arsenide field-effect transistors (GaAs ...

متن کامل

GaN WIDE BAND POWER INTEGRATED CIRCUITS (PREPRINT)

Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4...

متن کامل

High-Power, High-Efficiency, GaN HEMT Power Amplifiers for 4G Applications

Today’s wireless system requirements demand increasing performance from power amplifiers. The higher gain and output power available from today’s transistors reduce the number of amplifier stages, and improved efficiency decreases system DC power requirements and generated heat. But at these higher power and efficiency levels, power amplifier linearity needs to meet or exceed the requirements o...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014